30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Managem.

Pin Description ( TO-252-2L ) AFN3030 30V N-Channel Enhancement Mode MOSFET Features 30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V.

AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN3006S

AFN3009S

AFN3015S

AFN3016S

AFN3019S

AFN3025S

AFN3302W

AFN3306WS

AFN3309WS

AFN3310W

AFN3316W

AFN3334WS

AFN3400A

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