* 20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V
* 20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V
* 20V/ 6A,RDS(ON)=42mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON.

Pin Description ( DFN3X3-8L ) AFN3806W 20V N-Channel Enhancement Mode MOSFET Features
* 20V/ 9A,RDS(ON)=26mΩ@VGS=4.

AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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