AFN3468W mosfet equivalent, n-channel mosfet.
150V/1.5A,RDS(ON)=320mΩ@VGS=10V 150V/1.4A,RDS(ON)=340mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .
Pin Description ( SOT-23-6L )
AFN3468W
150V N-Channel Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=320mΩ@VGS=10V.
AFN3468W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
Image gallery
TAGS
Download (Size : 553.53KB)