AFN3400AS mosfet equivalent, 30v n-channel mosfet.
* ID=2.8A,RDS(ON)=36mΩ@VGS=10V
* ID=2.5A,RDS(ON)=40mΩ@VGS=4.5V
* ID=2.2A,RDS(ON)=42mΩ@VGS=2.5V
* ID=1.0A,RDS(ON)=60mΩ@VGS=1.8V
* Super high density ce.
Pin Description ( SOT-23 )
AFN3400AS
30V N-Channel Enhancement Mode MOSFET
Features
* ID=2.8A,RDS(ON)=36mΩ@VGS=10V.
AFN3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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