AFN3406AS datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

* ID=2.8A,RDS(ON)=40mΩ@VGS=10V
* ID=2.4A,RDS(ON)=48mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-23 package design Applic.

Application

Pin Description ( SOT-23 ) AFN3406AS 30V N-Channel Enhancement Mode MOSFET Features
* ID=2.8A,RDS(ON)=40mΩ@VGS=10V.

Description

AFN3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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