AFN3406A mosfet equivalent, 30v n-channel mosfet.
30V/2.4A,RDS(ON)=48mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design
Application
Power Management.
Pin Description ( SOT-23 )
AFN3406A
30V N-Channel Enhancement Mode MOSFET
Features
30V/2.4A,RDS(ON)=48mΩ@VGS=10V 30V/1.
AFN3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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