AFN3400A mosfet equivalent, n-channel mosfet.
30V/2.4A,RDS(ON)=54mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=65mΩ@VGS=2.5V 30V/1.0A,RDS(ON)=180mΩ@VGS=1.8V Super high density cell design for extremely l.
Pin Description ( SOT-23 )
AFN3400A
30V N-Channel Enhancement Mode MOSFET
Features
30V/2.4A,RDS(ON)=54mΩ@VGS=10V 30V/1.
AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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