AFN3466 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current c.

Application

Pin Description ( TSOP-6 ) AFN3466 30V N-Channel Enhancement Mode MOSFET Features 30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/2..

Description

AFN3466, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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