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AFN3442W Datasheet, Alfa-MOS

AFN3442W mosfet equivalent, n-channel mosfet.

AFN3442W Avg. rating / M : 1.0 rating-11

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AFN3442W Datasheet

Features and benefits

120V/2.0A,RDS(ON)=560mΩ@VGS=10V 120V/2.0A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.

Application

Pin Description ( SOT-23-6L ) AFN3442W 120V N-Channel Enhancement Mode MOSFET Features 120V/2.0A,RDS(ON)=560mΩ@VGS=10V.

Description

AFN3442W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

Image gallery

AFN3442W Page 1 AFN3442W Page 2 AFN3442W Page 3

TAGS

AFN3442W
N-Channel
MOSFET
Alfa-MOS

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