120V/2.0A,RDS(ON)=560mΩ@VGS=10V 120V/2.0A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.

Pin Description ( SOT-23-6L ) AFN3442W 120V N-Channel Enhancement Mode MOSFET Features 120V/2.0A,RDS(ON)=560mΩ@VGS=10V.

AFN3442W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN3446

AFN3400A

AFN3400AS

AFN3400S

AFN3402A

AFN3402AS

AFN3404AS

AFN3404S

AFN3406A

AFN3406AS

AFN3410

AFN3414A

AFN3414AS

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