AFN3446 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

20V/4.0A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=68mΩ@VGS=2.5V 20V/3.0A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Application

Pin Description ( TSOP-6 ) AFN3446 20V N-Channel Enhancement Mode MOSFET Features 20V/4.0A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.

Description

AFN3446, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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