AFN3414AS datasheet, mosfet equivalent, Alfa-MOS

Features and benefits

* 20V/4.0A,RDS(ON)=35mΩ@VGS=4.5V
* 20V/3.2A,RDS(ON)=45mΩ@VGS=2.5V
* 20V/2.6A,RDS(ON)=65mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS .

Application

Pin Description ( SOT-23 ) AFN3414AS 20V N-Channel Enhancement Mode MOSFET Features
* 20V/4.0A,RDS(ON)=35mΩ@VGS=4..

Description

AFN3414AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

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