AFN3410 mosfet equivalent, n-channel mosfet.
30V/6.0A,RDS(ON)=27mΩ@VGS=10V 30V/4.5A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management.
Pin Description ( TSOP-6 )
AFN3410
30V N-Channel Enhancement Mode MOSFET
Features
30V/6.0A,RDS(ON)=27mΩ@VGS=10V 30V/4..
AFN3410, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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