AFN1998S mosfet equivalent, n-channel enhancement mode mosfet.
100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design
Application
DC/DC Primary Side Switch POL Synchronous b.
Pin Description ( TO-263-2L )
Features
100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low.
AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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