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AFN1932E - N-Channel MOSFET

Download the AFN1932E datasheet PDF. This datasheet also covers the AFN1932E-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V.
  • 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD Protected.
  • SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1932E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1932E
Manufacturer Alfa-MOS
File Size 353.00 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1932E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1932 N-Channel MOSFET
AFN1912 N-Channel MOSFET
AFN1912E N-Channel MOSFET
AFN1990S N-Channel Enhancement Mode MOSFET
AFN1998S N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN1932E 30V N-Channel Enhancement Mode MOSFET Features  30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V  30V/1.5A,RDS(ON)=600mΩ@VGS=2.
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