AFN1912 mosfet equivalent, n-channel mosfet.
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low B.
Pin Description ( SOT-363 )
AFN1912
20V N-Channel Enhancement Mode MOSFET
Features
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V.
AFN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.
Image gallery
TAGS
Download (Size : 596.75KB)