20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low B.

Pin Description ( DFN1.0X0.6-3L ) AFN1602E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.8A,RDS(ON)=360mΩ@VGS=4.

AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.

AFN1610S

AFN1010S

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AFN1012E

AFN1024

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AFN1032

AFN1032E

AFN1034

AFN1034E

AFN1055S

AFN1062KS

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