AFN1055S datasheet, mosfet equivalent, Alfa-MOS

Features and benefits

* 100V/40A,RDS(ON)=6.0mΩ@VGS=10V
* 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-220-3L package design .

Application

Pin Description ( TO-220-3L ) Features
* 100V/40A,RDS(ON)=6.0mΩ@VGS=10V
* 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V
.

Description

AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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