MS1006 transistors equivalent, rf and microwave transistors.
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* Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain
DESCRIPTION:
The MS1006 is.
Features
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* Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization .
The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
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