MS1011 transistors equivalent, rf and microwave transistors.
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* OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD — 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN
DESCRIPTION:.
Features
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* OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD — 30 dB GOLD METALLIZATION COM.
The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
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