MS1007 transistors equivalent, rf & microwave transistors.
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* 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1007 is a 50V epitaxial silicon NPN pla.
Features
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* 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION.
The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C).
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