MS1000 transistors equivalent, rf & microwave transistors.
*
*
*
*
*
*
* 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
Th.
www.datasheet4u.com
Features
*
*
*
*
*
*
* 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION .
The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VC.
Image gallery
TAGS
Download (Size : 117.02KB)