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MS1003 Datasheet, Advanced Power Technology

MS1003 transistors equivalent, rf & microwave transistors.

MS1003 Avg. rating / M : 1.0 rating-15

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MS1003 Datasheet

Features and benefits


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* 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial .

Application

Features
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* 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURA.

Description

The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum powe.

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MS1003 Page 1 MS1003 Page 2 MS1003 Page 3

TAGS

MS1003
MICROWAVE
TRANSISTORS
MS1000
MS1001
MS1003SH
Advanced Power Technology

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