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AP30G120W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Features

  • N-.

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AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES ¡¿ ¡¿ ¡¿ ¡¿ 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGE IC@TC=25¢J IC@TC=100¢J ICM PD@TC=25¢J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 Parameter Collector-Emitter Voltage Rating 1200 ±30 60 30 160 208 -55 to 150 -55 to 150 300 Units V V A A A W ¢J ¢J ¢J Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .
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