AP30G120ASW
Features
▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ Ro HS pliant
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
VCES IC C G C E TO-3P G E
Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300
1200V 30A
Absolute Maximum Ratings
Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Diode Continunous Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Collector-Emitter Voltage
Units V V A A A A A W ℃ ℃ ℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol Rthj-c(IGBT) Rthj-a Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Value 0.6 2 40 Units ℃/W ℃/W ℃/W
Rthj-c(Diode)...
