AP30G120W
Features
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
VCES ¡¿ ¡¿ ¡¿
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1200V 30A C
High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package
Ro HS pliant
G C E TO-3P E
..
Absolute Maximum Ratings
Symbol VCES VGE IC@TC=25¢J IC@TC=100¢J ICM PD@TC=25¢J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current
Parameter Collector-Emitter Voltage
Rating 1200 ±30 60 30 160 208 -55 to 150 -55 to 150 300
Units V V A A A W ¢J ¢J ¢J
Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol Rthj-c Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.6 40 Units ¢J /W ¢J /W
Electrical Characteristics@T j=25o C(unless otherwise...
