AP3000C-11
DESCRIPTION
:
The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming.
PACKAGE STYLE 01
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
100 m A 300 V 250 m W @ TA = 25 C -65 C to +175 C -65 C to +175 C 20 C/W
..
NONE
CHARACTERISTICS
SYMBOL
VB CJ CP LS RS TL Trr I-REGION IF = 50 m A IF = 10 m A IF = 20 m A IR = 10 µA VR = 50 V VR = 40 V
TC = 25 C
TEST CONDITIONS f = 1.0 MHz f = 1.0 MHz f = 100 MHz IR = 6.0 m A IR = 100 m A @ 90%
MINIMUM
TYPICAL
MAXIMUM
UNITS
V p F p F n H
0.10 1.0 0.6 1000 100 30
Ohms n S n S µM
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1202
- FAX (818) 765-3004
Specifications are subject to change without notice.
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