AP30G10GD
Description
100V N+P-Channel Enhancement Mode MOSFET
The AP30G10GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 100V ID =32A
RDS(ON) < 42mΩ @ VGS=10V （Type：35mΩ）
VDS = -100V ID =-28A RDS(ON) < 100mΩ @ VGS=-10V（Type：80mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
AP30G03GD
TO-252-4L
Marking AP30G03GD XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
VDS VGS
Drain-Source Voltage Gate-Source Voltage
30 ±20
-30 ±20
ID@TA=25℃ ID@TA=70℃
IDM EAS
Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2 Single Pulse Avalanche Energy3
-28
-18.1
-85
IAS PD@TA=25℃
Avalanche Current Total Power...
