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MRA1417-6H Datasheet, ASI

MRA1417-6H transistor equivalent, npn silicon rf power transistor.

MRA1417-6H Avg. rating / M : 1.0 rating-12

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MRA1417-6H Datasheet

Features and benefits

INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 1.0 A VCBO PDISS TJ TSTG θJC 50 V 19 W @ TC = 25 OC -65 OC to +200 .

Application

in L-Band FM Microwave Links. FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching .

Description

The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 1.0 A VCBO PDISS TJ TSTG.

Image gallery

MRA1417-6H Page 1

TAGS

MRA1417-6H
NPN
SILICON
POWER
TRANSISTOR
MRA1417-6
MRA1417-11
MRA1417-2
ASI

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