MRA10007L
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRA1000- 7L/D
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, large- signal output and driver amplifier stages to 1000 MHz.
- Designed for Class A Linear Power Amplifiers
- Specified 19 Volt, 1000 MHz Characteristics: Output Power
- 7.0 Watts Power Gain
- 9.0 d B Min, Small- Signal
- Built- In Matching Network for Broadband Operation
- Gold Metallization for Improved Reliability
- Diffused Ballast Resistors
- Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Characteristic Thermal Resistance, Junction to Case (TC = 70°C) Value 28 50 3.5 42 0.25 200
- 65 to +150 Unit Vdc Vdc Vdc Watts W/°C °C °C Symbol RθJC
MRA1000-7L...
