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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRA1000–7L/D
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics: Output Power — 7.0 Watts Power Gain — 9.0 dB Min, Small–Signal • Built–In Matching Network for Broadband Operation • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRA10007L Datasheet
