MRA1417-2 transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching
MAXIMUM RATINGS
IC 0.5 A
VCBO
50 V
PDISS
12 W @ TC = 25 °C
TJ -65 °C to +200 °C
TS.
up to 1.7 GHz.
FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching
MAXIMUM RATING.
The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz.
FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching
MAXIMUM RATINGS
IC 0.5 A
VCBO
50 V
PDISS
12 W.
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