MRA1417-11 datasheet, transistor equivalent, ASI

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Features and benefits

INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 4.0 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TS.

Application

up to 1.7 GHz. FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATING.

Description

The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE:
* Gold Metallization
* Emitter Ballasting
* Input Matching MAXIMUM RATINGS IC 4.0 A VCBO 50 V PDISS 12 .

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