VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8
* General Description This device is produced with high cell density DMOS trench technolog.

such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are.

This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other batte.

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