SSC8120GS9 datasheet, mosfet equivalent, AFSEMI

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Features and benefits

* VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8
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* General Description This device is a N-Channel enhancement mode MOS.

Application

especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications
* Replace D.

Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .

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