SSC8120GS6 mosfet equivalent, n-channel enhancement mode mosfet.
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 1.2A
ESD 1.2K
* General Description
This device is a N-Channel enhancement mode MOSFET which is prod.
especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Loa.
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .
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