SSC8120GN1 datasheet, mosfet equivalent, AFSEMI

Features and benefits

VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.7A ESD 1.2K
* General Description This device is a N-Channel enhancement mode MOSFET which is prod.

Application

especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Loa.

Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .

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