ACE7402A mosfet equivalent, n-channel enhancement mode mosfet.
* 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
* 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
* Super high density cell design for extremely low R.
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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