ACE7401B transistor equivalent, p-channel enhancement mode field effect transistor.
* VDS(V)=-30V
* ID=-29A (VGS=-10V)
* RDS(ON)＜13mΩ (VGS=-20V)
* RDS(ON)＜14mΩ (VGS=-10V)
* RDS(ON)＜17mΩ (VGS=-5V)
Absolute Maximum Ratings Parameter
D.
Features
* VDS(V)=-30V
* ID=-29A (VGS=-10V)
* RDS(ON)＜13mΩ (VGS=-20V)
* RDS(ON)＜14mΩ (VGS=-10V)
* .
The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
* VDS(V)=-30V
* ID=-29A (VGS=-.
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