ACE7407A Overview
Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V
- 20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V
- 20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V
- 20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
