ACE7407A mosfet equivalent, p-channel enhancement mode mosfet.
* -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V
* -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V
* -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V
* -20V/-1.0A, RDS (ON)= 220mΩ@VGS=.
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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