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ACE7407A - P-Channel Enhancement Mode MOSFET

General Description

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V.
  • -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V.
  • -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V.
  • -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ACE7407A
Manufacturer ACE Technology
File Size 383.28 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE7407A Datasheet

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Other Datasheets by ACE Technology

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ACE7400 N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE7407A P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features • -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V • -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V • -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V • -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.