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TelCom Semiconductor
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TC1411 Datasheet Preview

TC1411 Datasheet

HIGH-SPEED MOSFET DRIVERS

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1
TC1411
TC1411N
1A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .................................................... 4 kV
s High Peak Output Current .................................. 1A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability .......................... 1000pF in 25nsec
s Short Delay Time .................................. 30nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ....................................... 8
s Pinout Same as TC1410/12/13
GENERAL DESCRIPTION
The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
2
3
4
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1411
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1411N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
Part No.
TC1411COA
TC1411CPA
TC1411EOA
TC1411EPA
TC1411NCOA
TC1411NCPA
TC1411NEOA
TC1411NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
5
6
FUNCTIONAL BLOCK DIAGRAM
TC1411
INVERTING
OUTPUTS
VDD
INPUT
4.7V
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
300mV
NONINVERTING
OUTPUTS
TC1411N
OUTPUT
7
TC1411/N-10 10/11/96
4-189
8



TelCom Semiconductor
TelCom Semiconductor

TC1411 Datasheet Preview

TC1411 Datasheet

HIGH-SPEED MOSFET DRIVERS

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TC1411 pdf
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA 70°C)
Plastic ............................................................. 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless other-
wise specified.
Symbol
Parameter
Test Conditions
Min
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
IPK Peak Output Current
IREV Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR Rise Time
tF Fall Time
tD1 Delay Time
tD2 Delay Time
Power Supply
IS Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
–5V VIN VDD
DC Test
DC Test
VDD = 16V, IO = 10mA
VDD = 16V
Duty Cycle 2%
t 300 µsec
Figure 1
Figure 1
Figure 1
Figure 1
VIN = 3V
VIN = 0V
TA = 25°C
– 40°C TA 85°C
2.0
–1
– 10
VDD – 0.025
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
0.5
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
Typ
8
10
10
1.0
25
27
29
25
27
29
30
33
35
30
33
35
0.5
0.1
Max
0.8
1
10
0.025
11
14
14
35
40
40
35
40
40
40
45
45
40
45
45
1.0
0.15
Unit
V
V
µA
V
V
A
A
nsec
nsec
nsec
nsec
mA
4-190
TELCOM SEMICONDUCTOR, INC.


Part Number TC1411
Description HIGH-SPEED MOSFET DRIVERS
Maker TelCom Semiconductor
Total Page 5 Pages
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