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TelCom Semiconductor
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TC1410 Datasheet Preview

TC1410 Datasheet

HIGH-SPEED MOSFET DRIVERS

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1
TC1410
TC1410N
0.5A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .....................................................4kV
s High Peak Output Current ............................... 0.5A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability ............................ 500pF in 25nsec
s Short Delay Time .................................. 35nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ..................................... 16
s Pinout Same as TC1411/12/13
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1410
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1410N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
GENERAL DESCRIPTION
The TC1410/1410N are 0.5V CMOS buffer/drivers .
They will not latch up under any conditions within their power
and voltage ratings. They are not subject to damage when
up to 5V of noise spiking of either polarity occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.
As MOSFET drivers, the TC1410/1410N can easily
switch 500pF gate capacitance in 25nsec with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No.
TC1410COA
TC1410CPA
TC1410EOA
TC1410EPA
TC1410NCOA
TC1410NCPA
TC1410NEOA
TC1410NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
TC1410
INVERTING
OUTPUTS
VDD
2
3
4
5
6
INPUT
4.7V
300mV
NONINVERTING
OUTPUTS
TC1410N
OUTPUT
7
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
TC1410/N-8 10/15/96
4-183
8



TelCom Semiconductor
TelCom Semiconductor

TC1410 Datasheet Preview

TC1410 Datasheet

HIGH-SPEED MOSFET DRIVERS

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TC1410 pdf
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA 70°C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless other-
wise specified. Typical values are measured at TA=25°C; VDD =16V.
Symbol Parameter
Test Conditions
Min Typ Max Unit
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
– 5V VIN VDD
– 40°C TA 85°C
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD = 16V, IO = 10mA
IPK Peak Output Current
IREV Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR Rise Time
VDD = 16V
Duty Cycle 2%
t 300 µsec
Figure 1
tF Fall Time
Figure 1
tD1 Delay Time
Figure 1
tD2 Delay Time
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
NOTE: 1. Switching times are guaranteed by design.
TA = 25°C
VDD – 0.025
TA=25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
2.0
–1
– 10
0.5
——V
— 0.8 V
— 1 µA
— 10
—V
— 0.025
16 22
20 28
20 28
0.5 —
——
V
A
A
25 35 nsec
27 40
29 40
25 35 nsec
27 40
29 40
30 40 nsec
33 45
35 45
30 40 nsec
33 45
35 45
0.5 1.0 mA
0.1 0.15
4-184
TELCOM SEMICONDUCTOR, INC.


Part Number TC1410
Description HIGH-SPEED MOSFET DRIVERS
Maker TelCom Semiconductor
Total Page 5 Pages
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