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TelCom Semiconductor
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TC1412 Datasheet Preview

TC1412 Datasheet

HIGH-SPEED MOSFET DRIVERS

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TC1412 pdf
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1
TC1412
TC1412N
2A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .....................................................4kV
s High Peak Output Current .................................. 2A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability .......................... 1000pF in 18nsec
s Short Delay Time .................................. 35nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ....................................... 4
s Pinout Same as TC1410/11/13
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1411
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1411N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
GENERAL DESCRIPTION
The TC1412/1412N are 2A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1412/1412N can easily
switch 1000 pF gate capacitance in 18 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No.
TC1412COA
TC1412CPA
TC1412EOA
TC1412EPA
TC1412NCOA
TC1412NCPA
TC1412NEOA
TC1412NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
TC1411
INVERTING
OUTPUTS
VDD
INPUT
4.7V
300mV
NONINVERTING
OUTPUTS
TC1411N
OUTPUT
7
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
8
TC1412/N-7 10/11/96
4-195



TelCom Semiconductor
TelCom Semiconductor

TC1412 Datasheet Preview

TC1412 Datasheet

HIGH-SPEED MOSFET DRIVERS

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TC1412 pdf
2A HIGH-SPEED MOSFET DRIVERS
TC1412
TC1412N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless other-
wise specified. Typical values are measured at TA = 25°C; VDD = 16V.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
IPK Peak Output Current
IREV Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR Rise Time
tF Fall Time
tD1 Delay Time
tD2 Delay Time
Power Supply
IS Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
–5V VIN VDD
DC Test
DC Test
VDD = 16V, IO = 10mA
VDD = 16V
Duty Cycle 2%
t 300 µsec
Figure 1
Figure 1
Figure 1
Figure 1
VIN = 3V
VIN = 0V
TA = 25°C
– 40°C TA 85°C
2.0
–1
– 10
VDD – 0.025
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
0.5
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
4
5
5
2.0
18
20
22
18
20
22
35
40
40
35
40
40
0.5
0.1
—V
0.8 V
1 µA
10
0.025
6
7
7
V
V
A
A
26 nsec
31
31
26 nsec
31
31
45 nsec
50
50
45 nsec
50
50
1.0 mA
0.15
4-196
TELCOM SEMICONDUCTOR, INC.


Part Number TC1412
Description HIGH-SPEED MOSFET DRIVERS
Maker TelCom Semiconductor
Total Page 5 Pages
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