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2N2102 Datasheet Preview

2N2102 Datasheet

Transistor

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2N2102 pdf
Transistor
Description:
This is a Silicon NPN transistor in a TO-39
type case designed primarily for amplifier and
switching applications. This device features high
breakdown voltage low leakage current, low
capacity, and beta useful over an extremely wide
current range.
Absolute Maximum Ratings:
Collector-Base Voltage, Vcbo
: 120V
Collector-Emitter Voltage, Vceo
: 65V
Emitter-Base Voltage, Vebo
: 7V
Continuous Collector Current, Ic
: 1A
Total Device Dissipation
(Ta = +25ºC), Pd
: 800mW
Derate above 25ºC
: 4.6mW/ºC
Total Device Dissipation
(Tc = + 25ºC), Pd
: 5W
Derate above 25ºC
: 28.6mW/ºC
Operating Junction Temperature Range, Tj : -65ºC to +200ºC
Storage Temperature Range, Tstg
: -65ºC to 200ºC
Thermal Resistance,
Junction-to-Case, Rthjc
: 35ºC/W
Thermal Resistance,
Junction-to-Ambient, Rthja
: 175ºC/W
Lead Temperature (During Soldering, 1/16"
from case, 60sec max), Tl
: 300ºC
Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)
Parameter
OFF Characteristics
Collector-Emitter Breakdown Voltage
Symbol Test Conditions
V(br)ceo Ic = 100mA, Ib = 0
Collector-Base Breakdown Voltage
V(br)cbo Ic = 100µA, Ie = 0
Emitter-Base Breakdown Voltage
Collector-Cut-Off Current
Emitter Cut-Off Current
On Characteristics (Note 1)
V(br)ebo
Icbo
Iebo
Ie = 100µA, Ic = 0
Vcb = 60V, Ie = 0
Vcb = 60V, Ie = 0, Ta = +150ºC
Vbe = 5V, Ic = 0
DC Current Gain
Vce = 10V, Ic = 0.1mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
hfe
Vce = 10V, Ic = 10mA, Ta = -55ºC
Vce = 10V, Ic = 500mA
Vce = 10V, Ic = 1A
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Page <1>
Min Max Unit
65 -
120 -
7-
- 0.002
-2
- 0.002
V
µA
20 -
35 -
40 120
20 -
25 -
10 -
-
-
-
-
-
-
07/09/12 V1.0



Multicomp
Multicomp

2N2102 Datasheet Preview

2N2102 Datasheet

Transistor

No Preview Available !

2N2102 pdf
Transistor
On Characteristics (Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small-Signal Characteristics
Vce(sat)
Vbe(sat)
Ic = 150mA, Ib = 15mA
Ic = 150mA, Ib = 15mA
Current Gain-Bandwidth Product
Output Capacitance
ft Vce = 10V, Ic = 50mA, f = 20MHz
Cobo Vcb = 10V, Ie = 0, f = 1MHz
Input Capacitance
Cibo Vbe = 500mV, Ic = 0, f = 1MHz
Small-Signal Current Gain
hfe Vce = 5V, Ic = 1mA, f = 1kHz
Noise Figure
NF Vce = 10V, Ic = 100 µA, f = kHz, Rs = 1kΩ
Note 1. Pulse Test: Pulse Width <= 300s, Duty Cycle <= 1%
- 0.5
V
- 1.1
60 - MHz
- 15
pF
- 80
30 100 -
- 6 dB
Dimensions A B C D E F G H J
K
Min. 8.50 7.74 6.09 0.40 - 2.41 4.82 0.71 0.73 12.70
Max.
9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 -
Dimensions : Millimetres
L
42º
48º
Part Number Table
Description
Transistor
Part Number
2N2102
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
www.element14.com
www.farnell.com
www.newark.com
Page <2>
07/09/12 V1.0


Part Number 2N2102
Description Transistor
Maker Multicomp
Total Page 2 Pages
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