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STMicroelectronics Electronic Components Datasheet

2N2102 Datasheet

EPITAXIAL PLANAR NPN

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2N2102 pdf
® 2N2102
EPITAXIAL PLANAR NPN
s GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
)transistor in Jedec TO-39 metal case. It is
t(sintended for a wide variety of small-signall and
cmedium power applications in military and
Produindustrial equipments.
TO-39
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE 10)
Emitter-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
at TC 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
120
65
80
7
1
1
5
-65 to 175
175
Unit
V
V
V
V
A
W
W
oC
oC
December 2002
1/4


STMicroelectronics Electronic Components Datasheet

2N2102 Datasheet

EPITAXIAL PLANAR NPN

No Preview Available !

2N2102 pdf
2N2102
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
30 oC/W
150 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
TC = 150 oC
2 nA
2 µA
IEBO Emitter Cut-off Current VEB = 5 V
5 nA
(IC = 0)
V(BR)CBO Collector-Base
)Breakdown Voltage
t(s(IE = 0)
IC = 100 µA
120 V
cVCEO(sus)Collector-Emitter
uSustaining Voltage
d(IB = 0)
IC = 30 mA
65 V
roVCE(sat)Collector-Emitter
PSaturation Voltage
IC = 150 mA
IB = 15 mA
0.5 V
teVBE(sat)Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
1.1 V
- ObsolehFEDC Current Gain
IC = 10 µA
IC = 100 µA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 1 A
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
10
20
35
40
25
10
120
t(s)hfeHigh Frequency
Current Gain
IC = 50 mA
f = 20 MHz
VCE = 10 V
6
ducNF Noise Figure
IC = 300 µA VCE = 10 V f = 1 KHz
BW = 1 Hz
Rg = 510
8 dB
roCCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1MHz
15 pF
te PCEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V
ObsolePulsed: Pulse duration = 300 µs, duty cycle 1 %
f = 1MHz
80 pF
2/4


Part Number 2N2102
Description EPITAXIAL PLANAR NPN
Maker STMicroelectronics
Total Page 4 Pages
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