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2N2102 Datasheet Preview

2N2102 Datasheet

NPN SILICON PLANAR TRANSISTOR

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2N2102 pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, RBE < 10
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
65
80
120
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case
**Rth (j-a)
Rth (j-c)
175
35
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCER
IC=1mA, RBE=10
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
VCEX
VCBO
VEBO
IC=100µA, VEB=1.5V
IC=100µA, IE=0
IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE IC=0.1mA, VCE=10V
*IC=10mA, VCE=10V
*IC=10mA, VCE=10V, Ta=55ºC
*IC=150mA, VCE=10V
*IC=500mA, VCE=10V
*IC=1A, VCE=10V
MIN
80
65
120
120
7
20
35
20
40
25
10
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
**Rth (j-a) is measured with the device soldered into a typical printed circuit board
2N2102Rev_1 040904E
UNIT
V
V
V
V
A
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
TYP MAX
2
2
2
UNIT
V
V
V
V
V
nA
µA
nA
120
Continental Device India Limited
Data Sheet
Page 1 of 4



CDIL
CDIL

2N2102 Datasheet Preview

2N2102 Datasheet

NPN SILICON PLANAR TRANSISTOR

No Preview Available !

2N2102 pdf
NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Saturation Voltage *VCE (sat)
IC=150mA, IB=15mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Impedance
Noise Figure
fT IC=50mA, VCE=10V, f=20MHz
Cobo
VCB=10V, IE=0, f=1MHz
Cibo VEB=0.5V, IC=0, f=1MHz
hib IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hrb IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hfe IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
hob IC=1mA, VCE=5V, f=1KHz
IC=5mA, VCE=10V, f=1KHz
IC=300µA, VCE=10V,
NF f=1KHz,Bandwidth=1.0 Hz
RS=1k
MIN
60
24
4.0
30
35
0.01
0.01
TYP MAX
0.5
1.1
UNIT
V
V
MHz
15 pF
80 pF
34
8.0
3.0 x10 -4
3.0 x10 -4
100
150
0.5 µmho
1.0 µmho
6.0 dB
2N2102Rev_1 040904E
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number 2N2102
Description NPN SILICON PLANAR TRANSISTOR
Maker CDIL
Total Page 4 Pages
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