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  Microchip Technology Semiconductor Electronic Components Datasheet  

TC1017 Datasheet

Tiny CMOS LDO

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TC1017 pdf
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M
TC1017
150 mA, Tiny CMOS LDO With Shutdown
Features
• Space-saving 5-Pin SC-70 and SOT-23
Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 150 mA Output Current
• Requires Only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µsec (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA (typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators
Applications
• Cellular/GSM/PHS Phones
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Electronic Games
• Pagers
General Description
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar low dropout regulators. It is
offered in a SC-70 or SOT-23 package. The SC-70
package represents a 50% reduced footprint versus
the popular SOT-23 package.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiescent operating current consumed by
bipolar LDOs.
With small-space requirements and cost in mind, the
TC1017 was developed to be stable over the entire
input voltage and output current operating range using
low value (1 µF ceramic), low equivalent series
resistance output capacitors. Additional integrated
features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage regulating
application.
Key performance parameters for the TC1017 are low
dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Package Types
SC-70
VIN
5
VOUT
4
TC1017
SOT-23
12 3
SHDN NC GND
VOUT
NC
54
TC1017
12 3
VIN GND SHDN
2003 Microchip Technology Inc.
DS21813B-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

TC1017 Datasheet

Tiny CMOS LDO

No Preview Available !

TC1017 pdf
TC1017
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage ......................................... (–0.3) to (VIN + 0.3)
Power Dissipation .......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ................. VIN + 0.3V to –0.3V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
PIN FUNCTION TABLE
Name
Function
SHDN
NC
GND
VOUT
VIN
Shutdown control input.
No connect
Ground terminal
Regulated voltage output
Unregulated supply input
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
Input Operating Voltage
Maximum Output Current
Output Voltage
VOUT Temperature Coefficient
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
VIN
IOUTMAX
VOUT
TCVOUT
|(∆VOUT/VIN)| / VR
|∆VOUT| / VR
VIN – VOUT
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown Mode)
IIN
IINSD
PSRR
tWK
2.7
150
VR – 2.5%
VR ±0.5%
40
0.04
0.38
2
90
180
285
53
0.05
58
10
6.0
VR + 2.5%
0.2
1.5
200
350
500
90
2
V
mA
V
ppm/°C
%/V
%
mV
µA
µA
dB
µs
Note 1:
2:
3:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
TCVOUT = (---V----O-----U-----T---M------A---V-X---O--–--U---V--T--O---×-U-----T---T-M-----I---N----)----×-----1--0----6-
Note 1
Note 2
Note 3
(VR + 1V) < VIN < 6V
IL = 0.1 mA to IOUTMAX
IL = 100 µA
IL = 50 mA
IL = 100 mA
IL = 150 mA
SHDN = VIH, IL = 0
SHDN = 0V
f =1 kHz, IL = 50 mA
VIN = 5V, IL = 60 mA,
CIN = COUT =1 µF,
f = 100 Hz
4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for
more details.
DS21813B-page 2
2003 Microchip Technology Inc.


Part Number TC1017
Description Tiny CMOS LDO
Maker Microchip Technology
Total Page 22 Pages
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