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TelCom Semiconductor
TelCom Semiconductor

TC1014 Datasheet Preview

TC1014 Datasheet

50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS

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TC1014 pdf
50mA CMOS LDO WITH SHUTDOWN
AND REFERENCE BYPASS
PRELIMINARY INFORMATION
TTCC1100114
50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
FEATURES
s Zero Ground Current for Longer Battery Life!
s Very Low Dropout Voltage
s Guaranteed 50mA Output
s High Output Voltage Accuracy
s Standard or Custom Output Voltages
s Power-Saving Shutdown Mode
s Reference Bypass Input for Ultra Low-Noise
Operation
s Over-Current and Over-Temperature Protection
s Space-Saving SOT-23A-5 Package
s Pin Compatible Upgrade for MIC5205 and
NSC2980
APPLICATIONS
s Battery Operated Systems
s Portable Computers
s Medical Instruments
s Instrumentation
s Cellular / GSM / PHS Phones
s Linear Post-Regulator for SMPS
s Pagers
TYPICAL APPLICATION
VIN 1 VIN
VOUT 5
VOUT
1µF
2
GND TC1014
GENERAL DESCRIPTION
The TC1014 is a high accuracy (typically ±0.5%) CMOS
upgrade for older (bipolar) low dropout regulators such as
the LP2980. Designed specifically for battery-operated sys-
tems, the TC1014’s CMOS construction eliminates wasted
ground current, significantly extending battery life. Total
supply current is typically 50µA at full load (20 to 60 times
lower than in bipolar regulators!).
TC1014 key features include ultra low-noise operation
(plus optional Bypass input); very low dropout voltage
(typically 95mV at full load) and internal feed-forward com-
pensation for fast response to step changes in load. Supply
current is reduced to less than 1µA when the shutdown input
is low. The TC1014 also incorporates both over-tempera-
ture and over-current protection.
The TC1014 is stable with an output capacitor of only
1µF and has a maximum output current of 100mA. For
higher output versions, please see the TC1107, TC1108,
TC1173 (IOUT = 300mA) data sheets.
ORDERING INFORMATION
Part No.
Output
Voltage **(V) Package
Junction
Temp. Range
TC1014-2.5VCT 2.5
SOT-23A-5* – 40°C to +125°C
TC1014-2.7VCT 2.7
SOT-23A-5* – 40°C to +125°C
TC1014-3.0VCT 3.0
SOT-23A-5* – 40°C to +125°C
TC1014-3.3VCT 3.3
SOT-23A-5* – 40°C to +125°C
TC1014-5.0VCT 5.0
SOT-23A-5* – 40°C to +125°C
NOTE: *SOT-23A-5 is equivalent to the EIAJ (SC-74A)
** Other output voltages available. Please contact TelCom
Semiconductor for details
PIN CONFIGURATION
3
SHDN
Shutdown Control
(from Power Control Logic)
4
Bypass
470pF
Reference
Bypass Cap
(Optional)
VOUT
5
Bypass
4
12 3
VIN GND SHDN
TC1014
(SOT-23A-5*)
TOP VIEW
NOTE: *SOT-23A-5 is equivalent to the EIAJ (SC-74A)
TC1014-01-6/5/97 TelCom Semiconductor reserves the right to make changes in the circuitry and1specifications to its devices.



TelCom Semiconductor
TelCom Semiconductor

TC1014 Datasheet Preview

TC1014 Datasheet

50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS

No Preview Available !

TC1014 pdf
PRELIMINARY INFORMATION
50mA CMOS LDO WITH SHUTDOWN
AND REFERENCE BYPASS
TC1014
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (VIN + 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40°C < TJ < 125°C
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Symbol
Parameter
Test Conditions
Min Typ Max
Units
VIN
IOUTMAX
VOUT
TCVOUT
Input Operating Voltage
Maximum Output Current
Output Voltage
VOUT Temperature Coefficient
VOUT/VIN
VOUT/VOUT
Line Regulation
Load Regulation
VIN – VOUT Dropout Voltage (Note 4)
IGND
IIN
IINSD
PSRR
IOUTSC
VOUT/PD
eN
Ground Pin Current
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
SHDN Input
Note 1
Note 2
50
VR – 2.5%
(VR + 1V) < VIN < 6V
IL = 1.0mA to IOUTMAX
(Note 3)
IL = 100µA
IL = 20mA
IL = 50mA
(Note 4)
IL = IOUTMAX, (Note 5)
SHDN = VIH, IL = 0
SHDN = 0V
FRE 1kHz
VOUT = 0V
Note 6
IL = IOUTMAX
470pF from Bypass to GND
VR ±0.5%
20
40
0.01
0.5
5
65
95
50
64
200
0.04
260
6.5
VR + 2.5%
0
0.05
400
V
mA
V
ppm/°C
%
%
mV
µA
µA
µA
dB
mA
%/W
nV/Hz
VIH
SHDN Input High Threshold
VIN = 2.5V to 6.5V
45 — — %VIN
VIL
SHDN Input Low Threshold
VIN = 2.5V to 6.5V
— — 15 %VIN
NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.
2. TCVOUT = (VOUTMAX VOUTMIN) x 10 6
VOUT x T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the
thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load
current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD).
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details.
.
TC1014-01-6/5/97
2


Part Number TC1014
Description 50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
Maker TelCom Semiconductor
Total Page 10 Pages
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