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  Microchip Technology Semiconductor Electronic Components Datasheet  

TC1015 Datasheet

CMOS LDOs

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TC1015 pdf
TC1014/TC1015/TC1185
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
Features:
General Description
• Low Supply Current (50 µA, typical)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
Applications:
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Typical Application
VIN 1 VIN
VOUT 5
VOUT
TC1014
TC1015
+
1 µF
2
TC1185
GND
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include ultra low-noise
operation (plus optional Bypass input), fast response to
step changes in load, and very low dropout voltage,
typically 85 mV (TC1014), 180 mV (TC1015), and
270 mV (TC1185) at full-load. Supply current is
reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (IOUT = 300 mA) data sheets.
Package Type
5-Pin SOT-23
VOUT
Bypass
54
TC1014
TC1015
TC1185
1 23
3
SHDN
4
Bypass
470 pF
Reference
Bypass Cap
(Optional)
VIN GND SHDN
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
DS21335E-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

TC1015 Datasheet

CMOS LDOs

No Preview Available !

TC1015 pdf
TC1014/TC1015/TC1185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ Max Units Device
Test Conditions
Input Operating Voltage
VIN 2.7 6.0 V
Note 1
Maximum Output Current
IOUTMAX
50
— mA TC1014
100 — —
TC1015
150 — —
TC1185
Output Voltage
VOUT
VR – 2.5% VR ±0.5% VR + 2.5%
V
Note 2
VOUT Temperature Coefficient TCVOUT
20 — ppm/°C
40
Note 3
Line Regulation
Load Regulation
ΔVOUT/
ΔVIN
ΔVOUT/
VOUT
0.05
0.5
0.5
0c.35
2
3
% — (VR + 1V) VIN 6V
% TC1014; TC1015 IL = 0.1 mA to IOUTMAX
TC1185
IL = 0.1 mA to IOUTMAX
(Note 4)
Dropout Voltage
Supply Current (Note 8)
Shutdown Supply Current
Power Supply Rejection
Ratio
VIN-VOUT
IIN
IINSD
PSRR
2 — mV
— IL = 100 µA
65 —
— IL = 20 mA
85 120
— IL = 50 mA
180 250
TC1015; TC1185 IL = 100 mA
270 400
TC1185
IL = 150 mA (Note 5)
50 80 µA
— SHDN = VIH, IL = 0
0.05 0.5 µA
— SHDN = 0V
64 — dB
— FRE 1 kHz
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
IOUTSC
ΔVOUT/
ΔPD
TSD
300 450 mA
0.04 — V/W
160 — °C
— VOUT = 0V
Notes 6, 7
Thermal Shutdown
Hysteresis
ΔTSD
10
— °C
Note
1:
2:
3:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT.
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
DS21335E-page 2
© 2007 Microchip Technology Inc.


Part Number TC1015
Description CMOS LDOs
Maker Microchip Technology
Total Page 22 Pages
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