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Intersil Electronic Components Datasheet

RFP45N06 Datasheet

45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs

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RFP45N06 pdf
RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet
July 1999 File Number 3574.4
45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49028.
Ordering Information
PART NUMBER
RFG45N06
PACKAGE
TO-247
BRAND
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 45A, 60V
• rDS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-455
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP45N06 Datasheet

45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP45N06 pdf
RFG45N06, RFP45N06, RF1S45N06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RG = 20K) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
45
Refer to Peak Current Curve
±20
Refer to UIS Curve
131
0.877
-55 to 175
300
260
V
V
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V (Figure 11)
60 - - V
VGS(TH) VGS = VDS, ID = 250µA (Figure 10)
2-4V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V (125oC)
-
-
- 1 µA
- 25 µA
IGSS VGS = ±20V
-
-
±100
nA
rDS(ON) ID = 45A, VGS = 10V (Figure 9)
- - 0.028
tON
td(ON)
tr
VDD = 30V, ID = 45A
RL = 0.667, VGS = +10V
RG = 3.6(Figure 13)
- - 120 ns
- 12 -
ns
- 74 -
ns
td(OFF)
- 37 -
ns
tf
- 16 -
ns
tOFF
- - 80 ns
Qg(TOT)
Qg(10)
Qg(TH)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V, ID = 45A,
RL = 1.07
Ig(REF) = 1.5mA
(Figure 13)
-
125 150
nC
- 67 80 nC
-
3.7 4.5
nC
CISS
COSS
VDS = 25V, VGS = 0V
f = 1MHz (Figure 12)
- 2050 -
- 600 -
pF
pF
CRSS
RθJC
RθJA
- 200 -
pF
- - 1.14 oC/W
- - 80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 45A
- - 1.5 V
Diode Reverse Recovery Time
trr ISD = 45A, dISD/dt = 100A/µs
- - 125 ns
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-456


Part Number RFP45N06
Description 45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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