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Intersil Electronic Components Datasheet

RFP45N06LE Datasheet

45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs

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RFP45N06LE pdf
Data Sheet
RFP45N06LE, RF1S45N06LESM
October 1999 File Number 4076.2
45A, 60V, 0.028 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode power MOSFETs
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49177.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N06LE
TO-220AB
FP45N06L
RF1S45N06LESM TO-263AB
F45N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel i.e., RF1S45N06LESM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 45A, 60V
• rDS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.


Intersil Electronic Components Datasheet

RFP45N06LE Datasheet

45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs

No Preview Available !

RFP45N06LE pdf
RFP45N06LE, RF1S45N06LESM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP45N06LE, RF1S45N06LESM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 45 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
142
0.95
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 13)
VGS = VDS, ID = 250µA (Figure 12)
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = ±10V
ID = 45A, VGS = 5V (Figure 11)
VDD = 30V, ID = 45A, RL = 0.67,
VGS = 5V, RGS = 2.5
(Figures 10, 18, 19)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 45A,
RL = 1.07
(Figures 20, 21)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
TO-220, and TO-263
MIN TYP
60 -
1-
--
--
--
--
--
- 20
- 150
- 55
- 90
--
- 107
- 58
- 2.4
- 2150
- 640
- 240
--
--
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
VSD
trr
ISD = 45A
ISD = 45A, dISD/dt = 100A/µs
--
--
2. Pulse test: pulse width 80µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
-
3
1
250
10
0.028
215
-
-
-
-
185
135
75
3.0
-
-
-
1.05
80
UNITS
V
V
µA
µA
µA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
MAX
1.5
155
UNITS
V
ns
2


Part Number RFP45N06LE
Description 45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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