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Intersil Electronic Components Datasheet

RFP45N03L Datasheet

45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs

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RFP45N03L pdf
Semiconductor
September 1998
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
Features
• 45A, 30V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM TO-263AB
F45N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
7-1
File Number 4005.2


Intersil Electronic Components Datasheet

RFP45N03L Datasheet

45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs

No Preview Available !

RFP45N03L pdf
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP45N03L, RF1S45N03L,
RF1S45N03LSM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage RGS = 20k(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
45
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Refer to UIS Curve
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
90
0.606
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = Rated BVDSS, VGS = 0V, TC = 150oC
VGS = ±10V
ID = 45A, VGS = 5V (Figure 11
VDD = 15V, ID = 45A, RL = 0.33,
VGS = 5V, RGS = 5
(Figures 15, 18, 19)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V, ID = 45A,
RL = 0.533
IG(REF) = 0.6mA
(Figures 20, 21)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
MIN
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-- V
-2 V
- 25 µA
- 250 µA
- ±100 nA
- 0.022
- 260 ns
15 -
ns
160 -
ns
20 -
ns
20 -
ns
- 60 ns
50 60 nC
30 36 nC
1.5 1.8 nC
1650 -
pF
575 -
pF
200 -
pF
- 1.65 oC/W
- 80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 45A
- - 1.5
Diode Reverse Recovery Time
trr ISD = 45A, dISD/dt = 100A/µs
- - 125
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
V
ns
7-2


Part Number RFP45N03L
Description 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 7 Pages
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1 RFP45N03L 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP45N03L pdf






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